Process and structure for fabrication of mems device having isolated egde posts

ABSTRACT

A method of fabricating an array of MEMS devices includes the formation of support structures located at the edge of upper strip electrodes. A support structure is etched to form a pair of individual support structures located at the edges of a pair of adjacent electrodes. The electrodes themselves may be used as a hard mask during the etching of these support structures. A resultant array of MEMS devices includes support structures having a face located at the edge of an overlying electrode and coincident with the edge of the overlying electrode.

BACKGROUND OF THE INVENTION

Microelectromechanical systems (MEMS) include micro mechanical elements,actuators, and electronics. Micromechanical elements may be createdusing deposition, etching, and/or other micromachining processes thatetch away parts of substrates and/or deposited material layers or thatadd layers to form electrical and electromechanical devices. One type ofMEMS device is called an interferometric modulator. As used herein, theterm interferometric modulator or interferometric light modulator refersto a device that selectively absorbs and/or reflects light using theprinciples of optical interference. In certain embodiments, aninterferometric modulator may comprise a pair of conductive plates, oneor both of which may be transparent and/or reflective in whole or partand capable of relative motion upon application of an appropriateelectrical signal. In a particular embodiment, one plate may comprise astationary layer deposited on a substrate and the other plate maycomprise a metallic membrane separated from the stationary layer by anair gap. As described herein in more detail, the position of one platein relation to another can change the optical interference of lightincident on the interferometric modulator. Such devices have a widerange of applications, and it would be beneficial in the art to utilizeand/or modify the characteristics of these types of devices so thattheir features can be exploited in improving existing products andcreating new products that have not yet been developed.

SUMMARY OF THE INVENTION

In one embodiment, a method of fabricating a microelectromechanicalsystems (MEMS) device is provided, the method including forming anelectrode layer over a substrate, depositing a sacrificial layer overthe electrode layer, forming a plurality of support structures, thesupport structures extending through the sacrificial layer, where atleast some of the plurality of support structures include edge supportstructures, depositing a mechanical layer over the plurality of supportstructures, patterning the mechanical layer to form strips, where thestrips are separated by gaps, and where the gaps are located over acentral portion of each of the edge support structures, and etching aportion of each of the edge support structures underlying the gaps,thereby forming isolated edge support structures.

In another embodiment, an apparatus including an array of MEMS devicesis provided, the array including a plurality of lower electrodes locatedover a substrate, a plurality of upper strip electrodes spaced apartfrom the plurality of lower electrodes by a cavity, the upper stripelectrodes separated by gaps, a plurality of isolated edge posts locatedbetween the upper strip electrodes and the lower electrodes, where theisolated edge posts include a face extending along the edge of theisolated edge posts facing an adjacent gap.

In another embodiment, a method of fabricating a microelectromechanicalsystems (MEMS) device is provided, the method including forming anelectrode layer over a substrate, depositing a sacrificial layer overthe electrode layer, depositing a reflective layer over the sacrificiallayer, forming a plurality of support structures, the support structuresextending through the sacrificial layer, where at least some of theplurality of support structures include edge support structures,depositing a mechanical layer over the plurality of support structures,patterning the mechanical layer to form strips, where the strips areseparated by gaps, and where the gaps are located over a central portionof each of the edge support structures, and etching portions of thereflective layer extending underneath the gaps in the mechanical layer,where etching the reflective layer includes exposing the reflectivelayer to an etch for a period of time sufficient to electrically isolateportions of the reflective layer located underneath the strips from oneanother.

In another embodiment, a MEMS device is provided, including first meansfor electrically conducting, second means for electrically conducting,adjacent second means for electrically conducting, and means forsupporting edge portions of and for electrically isolating the secondconducting means from the adjacent second conducting means, where thesecond conducting means is electrically isolated from the firstconducting means, and where the second conducting means is movablerelative to the first conducting means in response to generatingelectrostatic potential between the first and second conducting means.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an isometric view depicting a portion of one embodiment of aninterferometric modulator display in which a movable reflective layer ofa first interferometric modulator is in a relaxed position and a movablereflective layer of a second interferometric modulator is in an actuatedposition.

FIG. 2 is a system block diagram illustrating one embodiment of anelectronic device incorporating a 3×3 interferometric modulator display.

FIG. 3 is a diagram of movable mirror position versus applied voltagefor one exemplary embodiment of an interferometric modulator of FIG. 1.

FIG. 4 is an illustration of a set of row and column voltages that maybe used to drive an interferometric modulator display.

FIG. 5A illustrates one exemplary frame of display data in the 3×3interferometric modulator display of FIG. 2.

FIG. 5B illustrates one exemplary timing diagram for row and columnsignals that may be used to write the frame of FIG. 5A.

FIGS. 6A and 6B are system block diagrams illustrating an embodiment ofa visual display device comprising a plurality of interferometricmodulators.

FIG. 7A is a cross section of the device of FIG. 1.

FIG. 7B is a cross section of an alternative embodiment of aninterferometric modulator.

FIG. 7C is a cross section of another alternative embodiment of aninterferometric modulator.

FIG. 7D is a cross section of yet another alternative embodiment of aninterferometric modulator.

FIG. 7E is a cross section of an additional alternative embodiment of aninterferometric modulator.

FIGS. 8A-8H are schematic cross-sections depicting certain steps in thefabrication of an array of MEMS devices.

FIG. 9A is a schematic top plan view of a portion of an array ofpartially fabricated MEMS devices.

FIG. 9B is a schematic cross-section a partially fabricated MEMS devicefrom the array of FIG. 9A, taken along the line 9B-9B.

FIGS. 10A-10F are schematic cross-sections depicting certain steps inthe fabrication of an array of MEMS devices.

FIG. 11 is a schematic top plan view of the array of MEMS devicesfabricated by the process of FIGS. 10A-10F.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The following detailed description is directed to certain specificembodiments of the invention. However, the invention can be embodied ina multitude of different ways. In this description, reference is made tothe drawings wherein like parts are designated with like numeralsthroughout. As will be apparent from the following description, theembodiments may be implemented in any device that is configured todisplay an image, whether in motion (e.g., video) or stationary (e.g.,still image), and whether textual or pictorial. More particularly, it iscontemplated that the embodiments may be implemented in or associatedwith a variety of electronic devices such as, but not limited to, mobiletelephones, wireless devices, personal data assistants (PDAs), hand-heldor portable computers, GPS receivers/navigators, cameras, MP3 players,camcorders, game consoles, wrist watches, clocks, calculators,television monitors, flat panel displays, computer monitors, autodisplays (e.g., odometer display, etc.), cockpit controls and/ordisplays, display of camera views (e.g., display of a rear view camerain a vehicle), electronic photographs, electronic billboards or signs,projectors, architectural structures, packaging, and aestheticstructures (e.g., display of images on a piece of jewelry). MEMS devicesof similar structure to those described herein can also be used innon-display applications such as in electronic switching devices.

In some embodiments, the fabrication of an array of MEMS devices, suchas interferometric modulators, leads to the creation of residualstringers of conductive material that extend between electrodes, whichelectrodes should be electrically isolated from one another. Inembodiments in which the MEMS devices being fabricated areinterferometric modulators, a layer of conductive reflective materialoften forms these stringers. These conductive stringers may be locatedunderneath portions of support structures which support two adjacentelectrodes. By etching a portion of the support structures locatedbetween adjacent electrodes, the electrodes can advantageously bereliably electrically isolated from one another, while still providingsupport for each electrode in the form of a pair of isolated supportstructures formed from the original support structure. Advantageously,the mechanical layer which forms the electrodes can be used as a hardmask for the etching of the portion of the support structures locatedbetween the electrodes.

One interferometric modulator display embodiment comprising aninterferometric MEMS display element is illustrated in FIG. 1. In thesedevices, the pixels are in either a bright or dark state. In the bright(“on” or “open”) state, the display element reflects a large portion ofincident visible light to a user. When in the dark (“off” or “closed”)state, the display element reflects little incident visible light to theuser. Depending on the embodiment, the light reflectance properties ofthe “on” and “off” states may be reversed. MEMS pixels can be configuredto reflect predominantly at selected colors, allowing for a colordisplay in addition to black and white.

FIG. 1 is an isometric view depicting two adjacent pixels in a series ofpixels of a visual display, wherein each pixel comprises a MEMSinterferometric modulator. In some embodiments, an interferometricmodulator display comprises a row/column array of these interferometricmodulators. Each interferometric modulator includes a pair of reflectivelayers positioned at a variable and controllable distance from eachother to form a resonant optical cavity with at least one variabledimension. In one embodiment, one of the reflective layers may be movedbetween two positions. In the first position, referred to herein as therelaxed position, the movable reflective layer is positioned at arelatively large distance from a fixed partially reflective layer. Inthe second position, referred to herein as the actuated position, themovable reflective layer is positioned more closely adjacent to thepartially reflective layer. Incident light that reflects from the twolayers interferes constructively or destructively depending on theposition of the movable reflective layer, producing either an overallreflective or non-reflective state for each pixel.

The depicted portion of the pixel array in FIG. 1 includes two adjacentinterferometric modulators 12 a and 12 b. In the interferometricmodulator 12 a on the left, a movable reflective layer 14 a isillustrated in a relaxed position at a predetermined distance from anoptical stack 16 a, which includes a partially reflective layer. In theinterferometric modulator 12 b on the right, the movable reflectivelayer 14 b is illustrated in an actuated position adjacent to theoptical stack 16 b.

The optical stacks 16 a and 16 b (collectively referred to as opticalstack 16), as referenced herein, typically comprise several fusedlayers, which can include a transparent, conductive electrode layer,such as indium tin oxide (ITO), a partially reflective layer, such aschromium, and a transparent dielectric. The optical stack 16 is thuselectrically conductive, partially transparent, and partiallyreflective, and may be fabricated, for example, by depositing one ormore of the above layers onto a transparent substrate 20. The partiallyreflective layer can be formed from a variety of materials that arepartially reflective such as various metals, semiconductors, anddielectrics. The partially reflective layer can be formed of one or morelayers of materials, and each of the layers can be formed of a singlematerial or a combination of materials.

In some embodiments, the layers of the optical stack 16 are patternedinto parallel strips, and may form row electrodes in a display device asdescribed further below. The movable reflective layers 14 a, 14 b may beformed as a series of parallel strips of a deposited metal layer orlayers (orthogonal to the row electrodes of 16 a, 16 b) deposited on topof posts 18 and an intervening sacrificial material deposited betweenthe posts 18. When the sacrificial material is etched away, the movablereflective layers 14 a, 14 b are separated from the optical stacks 16 a,16 b by a defined gap 19. A highly conductive and reflective materialsuch as aluminum may be used for the reflective layers 14, and thesestrips may form column electrodes in a display device.

With no applied voltage, the cavity 19 remains between the movablereflective layer 14 a and optical stack 16 a, with the movablereflective layer 14 a in a mechanically relaxed state, as illustrated bythe pixel 12 a in FIG. 1. However, when a potential difference isapplied to a selected row and column, the capacitor formed at theintersection of the row and column electrodes at the corresponding pixelbecomes charged, and electrostatic forces pull the electrodes together.If the voltage is high enough, the movable reflective layer 14 isdeformed and is forced against the optical stack 16. A dielectric layer(not illustrated in this Figure) within the optical stack 16 may preventshorting and control the separation distance between layers 14 and 16,as illustrated by pixel 12 b on the right in FIG. 1. The behavior is thesame regardless of the polarity of the applied potential difference. Inthis way, row/column actuation that can control the reflective vs.non-reflective pixel states is analogous in many ways to that used inconventional LCD and other display technologies.

FIGS. 2 through 5B illustrate one exemplary process and system for usingan array of interferometric modulators in a display application.

FIG. 2 is a system block diagram illustrating one embodiment of anelectronic device that may incorporate aspects of the invention. In theexemplary embodiment, the electronic device includes a processor 21which may be any general purpose single- or multi-chip microprocessorsuch as an ARM, Pentium®, Pentium II®, Pentium III®, Pentium IV®,Pentiume® Pro, an 8051, a MIPS®, a Power PC®, an ALPHA®, or any specialpurpose microprocessor such as a digital signal processor,microcontroller, or a programmable gate array. As is conventional in theart, the processor 21 may be configured to execute one or more softwaremodules. In addition to executing an operating system, the processor maybe configured to execute one or more software applications, including aweb browser, a telephone application, an email program, or any othersoftware application.

In one embodiment, the processor 21 is also configured to communicatewith an array driver 22. In one embodiment, the array driver 22 includesa row driver circuit 24 and a column driver circuit 26 that providesignals to a display array or panel 30. The cross section of the arrayillustrated in FIG. 1 is shown by the lines 1-1 in FIG. 2. For MEMSinterferometric modulators, the row/column actuation protocol may takeadvantage of a hysteresis property of these devices illustrated in FIG.3. It may require, for example, a 10 volt potential difference to causea movable layer to deform from the relaxed state to the actuated state.However, when the voltage is reduced from that value, the movable layermaintains its state as the voltage drops back below 10 volts. In theexemplary embodiment of FIG. 3, the movable layer does not relaxcompletely until the voltage drops below 2 volts. Thus, there exists awindow of applied voltage, about 3 to 7 V in the example illustrated inFIG. 3, within which the device is stable in either the relaxed oractuated state. This is referred to herein as the “hysteresis window” or“stability window.” For a display array having the hysteresischaracteristics of FIG. 3, the row/column actuation protocol can bedesigned such that during row strobing, pixels in the strobed row thatare to be actuated are exposed to a voltage difference of about 10volts, and pixels that are to be relaxed are exposed to a voltagedifference of close to zero volts. After the strobe, the pixels areexposed to a steady state voltage difference of about 5 volts such thatthey remain in whatever state the row strobe put them in. After beingwritten, each pixel sees a potential difference within the “stabilitywindow” of 3-7 volts in this example. This feature makes the pixeldesign illustrated in FIG. 1 stable under the same applied voltageconditions in either an actuated or relaxed pre-existing state. Sinceeach pixel of the interferometric modulator, whether in the actuated orrelaxed state, is essentially a capacitor formed by the fixed and movingreflective layers, this stable state can be held at a voltage within thehysteresis window with almost no power dissipation. Essentially nocurrent flows into the pixel if the applied potential is fixed.

In typical applications, a display frame may be created by asserting theset of column electrodes in accordance with the desired set of actuatedpixels in the first row. A row pulse is then applied to the row 1electrode, actuating the pixels corresponding to the asserted columnlines. The asserted set of column electrodes is then changed tocorrespond to the desired set of actuated pixels in the second row. Apulse is then applied to the row 2 electrode, actuating the appropriatepixels in row 2 in accordance with the asserted column electrodes. Therow 1 pixels are unaffected by the row 2 pulse, and remain in the statethey were set to during the row 1 pulse. This may be repeated for theentire series of rows in a sequential fashion to produce the frame.Generally, the frames are refreshed and/or updated with new display databy continually repeating this process at some desired number of framesper second. A wide variety of protocols for driving row and columnelectrodes of pixel arrays to produce display frames are also well knownand may be used in conjunction with the present invention.

FIGS. 4, 5A, and 5B illustrate one possible actuation protocol forcreating a display frame on the 3×3 array of FIG. 2. FIG. 4 illustratesa possible set of column and row voltage levels that may be used forpixels exhibiting the hysteresis curves of FIG. 3. In the FIG. 4embodiment, actuating a pixel involves setting the appropriate column to−V_(bias), and the appropriate row to +ΔV, which may correspond to −5volts and +5 volts, respectively Relaxing the pixel is accomplished bysetting the appropriate column to +V_(bias), and the appropriate row tothe same +ΔV, producing a zero volt potential difference across thepixel. In those rows where the row voltage is held at zero volts, thepixels are stable in whatever state they were originally in, regardlessof whether the column is at +V_(bias), or −Δ_(bias). As is alsoillustrated in FIG. 4, it will be appreciated that voltages of oppositepolarity than those described above can be used, e.g., actuating a pixelcan involve setting the appropriate column to +V_(bias), and theappropriate row to −ΔV. In this embodiment, releasing the pixel isaccomplished by setting the appropriate column to −V_(bias), and theappropriate row to the same −ΔV, producing a zero volt potentialdifference across the pixel.

FIG. 5B is a timing diagram showing a series of row and column signalsapplied to the 3×3 array of FIG. 2 which will result in the displayarrangement illustrated in FIG. 5A, where actuated pixels arenon-reflective. Prior to writing the frame illustrated in FIG. 5A, thepixels can be in any state, and in this example, all the rows are at 0volts, and all the columns are at +5 volts. With these applied voltages,all pixels are stable in their existing actuated or relaxed states.

In the FIG. 5A frame, pixels (1,1), (1,2), (2,2), (3,2) and (3,3) areactuated. To accomplish this, during a “line time” for row 1, columns 1and 2 are set to −5 volts, and column 3 is set to +5 volts. This doesnot change the state of any pixels, because all the pixels remain in the3-7 volt stability window. Row 1 is then strobed with a pulse that goesfrom 0, up to 5 volts, and back to zero. This actuates the (1,1) and(1,2) pixels and relaxes the (1,3) pixel. No other pixels in the arrayare affected. To set row 2 as desired, column 2 is set to −5 volts, andcolumns 1 and 3 are set to +5 volts. The same strobe applied to row 2will then actuate pixel (2,2) and relax pixels (2,1) and (2,3). Again,no other pixels of the array are affected. Row 3 is similarly set bysetting columns 2 and 3 to −5 volts, and column 1 to +5 volts. The row 3strobe sets the row 3 pixels as shown in FIG. 5A. After writing theframe, the row potentials are zero, and the column potentials can remainat either +5 or −5 volts, and the display is then stable in thearrangement of FIG. 5A. It will be appreciated that the same procedurecan be employed for arrays of dozens or hundreds of rows and columns. Itwill also be appreciated that the timing, sequence, and levels ofvoltages used to perform row and column actuation can be varied widelywithin the general principles outlined above, and the above example isexemplary only, and any actuation voltage method can be used with thesystems and methods described herein.

FIGS. 6A and 6B are system block diagrams illustrating an embodiment ofa display device 40. The display device 40 can be, for example, acellular or mobile telephone. However, the same components of displaydevice 40 or slight variations thereof are also illustrative of varioustypes of display devices such as televisions and portable media players.

The display device 40 includes a housing 41, a display 30, an antenna43, a speaker 45, an input device 48, and a microphone 46. The housing41 is generally formed from any of a variety of manufacturing processesas are well known to those of skill in the art, including injectionmolding and vacuum forming. In addition, the housing 41 may be made fromany of a variety of materials, including, but not limited to, plastic,metal, glass, rubber, and ceramic, or a combination thereof. In oneembodiment, the housing 41 includes removable portions (not shown) thatmay be interchanged with other removable portions of different color, orcontaining different logos, pictures, or symbols.

The display 30 of exemplary display device 40 may be any of a variety ofdisplays, including a bi-stable display, as described herein. In otherembodiments, the display 30 includes a flat-panel display, such asplasma, EL, OLED, STN LCD, or TFT LCD as described above, or anon-flat-panel display, such as a CRT or other tube device, as is wellknown to those of skill in the art. However, for purposes of describingthe present embodiment, the display 30 includes an interferometricmodulator display, as described herein.

The components of one embodiment of exemplary display device 40 areschematically illustrated in FIG. 6B. The illustrated exemplary displaydevice 40 includes a housing 41 and can include additional components atleast partially enclosed therein. For example, in one embodiment, theexemplary display device 40 includes a network interface 27 thatincludes an antenna 43, which is coupled to a transceiver 47. Thetransceiver 47 is connected to a processor 21, which is connected toconditioning hardware 52. The conditioning hardware 52 may be configuredto condition a signal (e.g., filter a signal). The conditioning hardware52 is connected to a speaker 45 and a microphone 46. The processor 21 isalso connected to an input device 48 and a driver controller 29. Thedriver controller 29 is coupled to a frame buffer 28 and to an arraydriver 22, which in turn is coupled to a display array 30. A powersupply 50 provides power to all components as required by the particularexemplary display device 40 design.

The network interface 27 includes the antenna 43 and the transceiver 47so that the exemplary display device 40 can communicate with one or moredevices over a network. In one embodiment, the network interface 27 mayalso have some processing capabilities to relieve requirements of theprocessor 21. The antenna 43 is any antenna known to those of skill inthe art for transmitting and receiving signals. In one embodiment, theantenna transmits and receives RF signals according to the IEEE 802.11standard, including IEEE 802.11(a), (b), or (g). In another embodiment,the antenna transmits and receives RF signals according to the BLUETOOTHstandard. In the case of a cellular telephone, the antenna is designedto receive CDMA, GSM, AMPS, or other known signals that are used tocommunicate within a wireless cell phone network. The transceiver 47pre-processes the signals received from the antenna 43 so that they maybe received by and further manipulated by the processor 21. Thetransceiver 47 also processes signals received from the processor 21 sothat they may be transmitted from the exemplary display device 40 viathe antenna 43.

In an alternative embodiment, the transceiver 47 can be replaced by areceiver. In yet another alternative embodiment, the network interface27 can be replaced by an image source, which can store or generate imagedata to be sent to the processor 21. For example, the image source canbe a memory device such as a digital video disc (DVD) or a hard-discdrive that contains image data, or a software module that generatesimage data.

The processor 21 generally controls the overall operation of theexemplary display device 40. The processor 21 receives data, such ascompressed image data from the network interface 27 or an image source,and processes the data into raw image data or into a format that isreadily processed into raw image data. The processor 21 then sends theprocessed data to the driver controller 29 or to the frame buffer 28 forstorage. Raw data typically refers to the information that identifiesthe image characteristics at each location within an image. For example,such image characteristics can include color, saturation, and gray-scalelevel.

In one embodiment, the processor 21 includes a microcontroller, CPU, orlogic unit to control operation of the exemplary display device 40. Theconditioning hardware 52 generally includes amplifiers and filters fortransmitting signals to the speaker 45, and for receiving signals fromthe microphone 46. Conditioning hardware 52 may be discrete componentswithin the exemplary display device 40, or may be incorporated withinthe processor 21 or other components.

The driver controller 29 takes the raw image data generated by theprocessor 21 either directly from the processor 21 or from the framebuffer 28 and reformats the raw image data appropriately for high speedtransmission to the array driver 22. Specifically, the driver controller29 reformats the raw image data into a data flow having a raster-likeformat, such that it has a time order suitable for scanning across thedisplay array 30. Then the driver controller 29 sends the formattedinformation to the array driver 22. Although a driver controller 29,such as a LCD controller, is often associated with the system processor21 as a stand-alone Integrated Circuit (IC), such controllers may beimplemented in many ways. They may be embedded in the processor 21 ashardware, embedded in the processor 21 as software, or fully integratedin hardware with the array driver 22.

Typically, the array driver 22 receives the formatted information fromthe driver controller 29 and reformats the video data into a parallelset of waveforms that are applied many times per second to the hundredsand sometimes thousands of leads coming from the display's x-y matrix ofpixels.

In one embodiment, the driver controller 29, the array driver 22, andthe display array 30 are appropriate for any of the types of displaysdescribed herein. For example, in one embodiment, the driver controller29 is a conventional display controller or a bi-stable displaycontroller (e.g., an interferometric modulator controller). In anotherembodiment, the array driver 22 is a conventional driver or a bi-stabledisplay driver (e.g., an interferometric modulator display). In oneembodiment, a driver controller 29 is integrated with the array driver22. Such an embodiment is common in highly integrated systems such ascellular phones, watches, and other small area displays. In yet anotherembodiment, the display array 30 is a typical display array or abi-stable display array (e.g., a display including an array ofinterferometric modulators).

The input device 48 allows a user to control the operation of theexemplary display device 40. In one embodiment, the input device 48includes a keypad, such as a QWERTY keyboard or a telephone keypad, abutton, a switch, a touch-sensitive screen, or a pressure- orheat-sensitive membrane. In one embodiment, the microphone 46 is aninput device for the exemplary display device 40. When the microphone 46is used to input data to the device, voice commands may be provided by auser for controlling operations of the exemplary display device 40.

The power supply 50 can include a variety of energy storage devices asare well known in the art. For example, in one embodiment, the powersupply 50 is a rechargeable battery, such as a nickel-cadmium battery ora lithium ion battery. In another embodiment, the power supply 50 is arenewable energy source, a capacitor, or a solar cell including aplastic solar cell, and solar-cell paint. In another embodiment, thepower supply 50 is configured to receive power from a wall outlet.

In some embodiments, control programmability resides, as describedabove, in a driver controller which can be located in several places inthe electronic display system. In some embodiments, controlprogrammability resides in the array driver 22. Those of skill in theart will recognize that the above-described optimizations may beimplemented in any number of hardware and/or software components and invarious configurations.

The details of the structure of interferometric modulators that operatein accordance with the principles set forth above may vary widely. Forexample, FIGS. 7A-7E illustrate five different embodiments of themovable reflective layer 14 and its supporting structures. FIG. 7A is across section of the embodiment of FIG. 1, where a strip of metalmaterial 14 is deposited on orthogonally extending supports 18. In FIG.7B, the moveable reflective layer 14 is attached to supports 18 at thecorners only, on tethers 32. In FIG. 7C, the moveable reflective layer14 is suspended from a deformable layer 34, which may comprise aflexible metal. The deformable layer 34 connects, directly orindirectly, to the substrate 20 around the perimeter of the deformablelayer 34. These connections are herein referred to as support posts orstructures 18. The embodiment illustrated in FIG. 7D has support poststructures 18 that include support plugs 42 upon which the deformablelayer 34 rests. The movable reflective layer 14 remains suspended overthe cavity, as in FIGS. 7A-7C, but the deformable layer 34 does not formthe support posts by filling holes between the deformable layer 34 andthe optical stack 16. Rather, the support posts 18 are formed of aplanarization material, which is used to form the support post plugs 42.The embodiment illustrated in FIG. 7E is based on the embodiment shownin FIG. 7D, but may also be adapted to work with any of the embodimentsillustrated in FIGS. 7A-7C, as well as additional embodiments not shown.In the embodiment shown in FIG. 7E, an extra layer of metal or otherconductive material has been used to form a bus structure 44. Thisallows signal routing along the back of the interferometric modulators,eliminating a number of electrodes that may otherwise have had to beformed on the substrate 20.

In embodiments such as those shown in FIG. 7, the interferometricmodulators function as direct-view devices, in which images are viewedfrom the front side of the transparent substrate 20, the side oppositeto that upon which the modulator is arranged. In these embodiments, thereflective layer 14 optically shields the portions of theinterferometric modulator on the side of the reflective layer oppositethe substrate 20, including the deformable layer 34. This allows theshielded areas to be configured and operated upon without negativelyaffecting the image quality. Such shielding allows the bus structure 44in FIG. 7E, which provides the ability to separate the opticalproperties of the modulator from the electromechanical properties of themodulator, such as addressing and the movements that result from thataddressing. This separable modulator architecture allows the structuraldesign and materials used for the electromechanical aspects and theoptical aspects of the modulator to be selected and to functionindependently of each other. Moreover, the embodiments shown in FIGS.7C-7E have additional benefits deriving from the decoupling of theoptical properties of the reflective layer 14 from its mechanicalproperties, which are carried out by the deformable layer 34. Thisallows the structural design and materials used for the reflective layer14 to be optimized with respect to the optical properties, and thestructural design and materials used for the deformable layer 34 to beoptimized with respect to desired mechanical properties.

In one embodiment, a method of manufacturing an interferometricmodulator, such as those described above, is described with respect toFIGS. 8A-8H. In FIG. 8A, it can be seen that an electrode layer 52 hasbeen deposited on a substrate 50, and that a partially reflective layer54 has been deposited over the electrode layer 52. The partiallyreflective layer 54 and the electrode layer 52 are then patterned andetched to form gaps 56 which may define strip electrodes formed from theelectrode layer 52. In addition, the gap 56 may comprise, as it does inthe illustrated embodiment, an area of the electrode layer 52 and thepartially reflective layer 54 which have been removed from underneaththe location where a support structure will be formed. In otherembodiments, the partially reflective layer 54 and the electrode layer52 are only patterned and etched to form the strip electrodes, and thepartially reflective layer 54 and electrode layer 52 may thus extendunderneath some or all of the support structures. In one embodiment, theelectrode layer 52 comprises indium-tin-oxide (ITO). In one embodiment,the partially reflective layer 54 comprises a layer of chromium (Cr). Inother embodiments, the placement of the layers 52 and 54 may bereversed, such that the partially reflective layer is located underneaththe electrode layer 54. In another embodiment, a single layer (notshown) may serve as both the electrode layer and the partiallyreflective layer. In other embodiments, only one of the electrode layer52 or the partially reflective layer 54 may be formed.

In FIG. 8B, it can be seen that a dielectric layer 58 has been depositedover the patterned electrode layer 52 and partially reflective layer 54.In one embodiment, the dielectric layer 58 may comprise SiO₂. In furtherembodiments, one or more etch stop layers (not shown) may be depositedover the dielectric layer. These etch stop layers may protect thedielectric layer during the patterning of overlying layers. In oneembodiment, a etch stop layer comprising Al₂O₃ may be deposited over thedielectric layer 58. In a further embodiment, an additional layer ofSiO₂ may be deposited over the etch stop layer.

In FIG. 8C, a sacrificial layer 60 has been deposited over thedielectric layer 58. In one embodiment, the sacrificial layer 60comprises molybdenum (Mo) or silicon (Si), but other materials may beappropriate. Advantageously, the sacrificial layer 60 is selectivelyetchable with respect to the layers surrounding the sacrificial layer60. As can also be seen in FIG. 8C, a movable layer, in the illustratedembodiment taking the form of a reflective layer 62, has been depositedover the sacrificial layer. In certain embodiments, this movable layerwill comprise a conductive material. In the illustrated embodiment,unlike the partially reflective layer 54, the reflective layer 62 neednot transmit any light through the layer, and thus advantageouslycomprises a material with high reflectivity. In one embodiment, thereflective layer 62 comprises aluminum (Al), as aluminum has both veryhigh reflectivity and acceptable mechanical properties. In otherembodiments, reflective materials such as silver and gold may be used inthe reflective layer 62. In further embodiments, particularly innon-optical MEMS devices in which the movable layer need not bereflective, other materials, such as nickel and copper may be used inthe movable layer.

In FIG. 8D, the sacrificial layer 60 and the reflective layer 62 havebeen patterned and etched to form apertures 64 which extend through thesacrificial and reflective layers 60 and 62. As can be seen in theillustrated embodiment, these apertures 64 are preferably tapered tofacilitate continuous and conformal deposition of overlying layers.

With respect to FIG. 8E, it can be seen that a post layer 70 has beendeposited over the patterned reflective layer 62 and sacrificial layer60. This post layer 70 will form support posts located throughout anarray of MEMS devices. In embodiments in which the MEMS devices beingfabricated comprise interferometric modulator elements (such asmodulator elements 12 a and 12 b of FIG. 1), some of the support posts(such as the support structures 18 of FIG. 1) will be located at theedges of the upper movable electrodes (such as the movable reflectivelayer 14 of FIG. 1) of those interferometric modulator elements. Inaddition, as will be discussed in greater detail below with respect toFIG. 9, support posts may also be formed in the interior of theresulting interferometric modulator elements, away from the edges of theupper movable electrode, such that they support a central or interiorsection of the upper movable electrode. In one embodiment, the postlayer 70 comprises SiO₂, but a wide variety of post materials may beused. In certain embodiments, the post layer 70 may comprise aninorganic material, but in other embodiments an organic material may beused. Preferably, the post layer 70 is conformally and continuouslydeposited, particularly over the apertures 64 (see FIG. 8D).

In FIG. 8F, it can be seen that the post layer 70 has been patterned andetched to form a post structure 72. In addition, it can be seen that theillustrated post structure 72 has a peripheral portion which extendshorizontally over the underlying layers; this horizontally-extendingperipheral portion will be referred to herein as a wing portion 74. Aswith the patterning and etching of the sacrificial layer 60, the edges75 of the post structure 72 are preferably tapered or beveled in orderto facilitate deposition of overlying layers.

Because the reflective layer 62 was deposited prior to the deposition ofthe post layer 70, it will be seen that the reflective layer 62 mayserve as an etch stop during the etching process used to form the poststructure 72, as the portion of the post structure being etched isisolated from the underlying sacrificial layer 60 by the reflectivelayer 62, even though other portions of the post layer 70 are in contactwith the sacrificial layer 60. Thus, an etch process can be used to formthe post structures 72 which would otherwise etch the sacrificial layer60, as well.

Variations to the above process may be made, as well. In one embodiment,the reflective layer may be deposited after the patterning and etchingof the sacrificial layer, such that the post layer may be completelyisolated from the sacrificial layer, even along the sloped sidewalls ofthe apertures in the sacrificial layer. Such an embodiment provides anetch stop protecting the post structure during the release etch toremove the sacrificial layer. In another embodiment, the post layer maybe deposited over a patterned sacrificial layer prior to the depositionof the reflective layer. Such an embodiment may be used if thesacrificial layer will not be excessively consumed during the etching ofthe post structure, even without an etch stop.

In FIG. 8G, it can be seen that a mechanical layer 78 has been depositedover the post structures 72 and the exposed portions of the reflectivelayer 62. As the reflective layer 62 provides the reflective portion ofthe interferometric modulator element, the mechanical layer 78 mayadvantageously be selected for its mechanical properties, without regardfor the reflectivity. In one embodiment, the mechanical layer 78advantageously comprises nickel (Ni), although various other materials,such as Al, may be suitable. For convenience, the combination of themechanical layer 78 and reflective layer 62 may be referred tocollectively as the deformable electrode or deformable reflective layer80.

As will be described in greater detail with respect to FIG. 9, afterdeposition of the mechanical layer 78, the mechanical layer 78 ispatterned and etched to form desired structures. In particular, themechanical layer 78 may be patterned and etched to form gaps whichdefine electrodes formed from strips of the mechanical layer which areelectrically isolated from one another. The underlying reflective layer62 may also be patterned and etched to remove the exposed portions ofthe reflective layer 62. In one embodiment, this may be done via asingle patterning and etching process. In other embodiments, twodifferent etches may be performed in succession, although the same maskused to pattern and etch the mechanical layer 78 may be left in placeand used to selectively etch the reflective layer 62. In one particularembodiment, in which the mechanical layer 78 comprises Ni and thereflective layer 62 comprises Al, the Ni may be etched by a Nickel Etch(which generally comprise nitric acid, along with other components), andthe Al may be etched by either a phosphoric/acetic acid etch or a PAN(phosphoric/acetic/nitric acid) etch. A PAN etch may be used to etch Alin this embodiment, even though it may etch the underlying sacrificiallayer 60 as well, because the deformable reflective layer 80 has alreadybeen formed over the sacrificial layer 60, and the desired spacingbetween the deformable reflective layer 80 and underlying layers hasthus been obtained. Any extra etching of the sacrificial layer 60 duringthis etch will not have a detrimental effect on the finishedinterferometric modulator.

In FIG. 8H, it can be seen that the deformable electrode or reflectivelayer 80, which comprises the mechanical layer 78 and the reflectivelayer 62, has also been patterned and etched to form etch holes 82. Arelease etch is then performed to selectively remove the sacrificiallayer 60, forming a cavity 84 which permits the deformable reflectivelayer 80 to deform toward the electrode layer 52 upon application ofappropriate voltage. In one embodiment, the release etch comprises aXeF₂ etch, which will selectively remove sacrificial materials like Mo,W, or polysilicon without significantly attacking surrounding materialssuch as Al, SiO₂, Ni, or Al₂O₃. The etch holes 82, along with the gapsbetween the strip electrodes formed from the mechanical layer 78,advantageously permit exposure of the sacrificial layer 60 to therelease etch.

FIG. 9A depicts a portion of a partially finished interferometricmodulator array 90. In this embodiment, the mechanical layer 78 (seeFIG. 8H) has been patterned and etched, but the underlying reflectivelayer 62 has not yet been etched. Two upper electrodes 92 formed bypatterned and etched sections of the mechanical layer 78 overlie poststructures such as post structure 72 of FIG. 8F. The electrodes 92 areseparated by a gap 93. In particular, it can be seen that certain poststructures are internal posts 94 which are located underneath the upperelectrode 92. The support structure 72 (see, e.g., FIGS. 8F-8H), is anexample of such an interior support post 94, wherein the mechanicallayer 78, which comprises a portion of an upper electrode 92, extendscompletely over the interior support post 94. Other post structures areedge posts 96 which extend at least partially beyond the upperelectrodes 92. The depicted edge posts 96 extend between two adjacentupper electrodes 92, providing support to both electrodes 92. Other edgeposts, such as those which are located at the edges of aninterferometric modulator array 90, may simply extend beyond the edge ofa single upper electrode 92. In certain embodiments, as discussed above,the upper electrode 92 may comprise either a mechanical layer fused to areflective layer, or a mechanical layer partially separated from thereflective layer at the post edges, as discussed above with respect toFIGS. 7C-7E.

While the size and shape of the internal posts 94 and edge posts 96 mayvary, in the illustrated embodiment, these posts comprise wing portions74, as in the post structure 72 of FIG. 8F. Depending on the shape ofthe post and the thickness of the deposited post layer, the posts 94 and96 may further include a sloped portion 98 which tapers inward, as wellas a substantially flat portion 99 at the base of the post, as shown inFIG. 9B.

FIG. 9B depicts a cross-section of the partially fabricatedinterferometric modulator array of FIG. 9A, taken along the line 9B-9B.As can be seen, the mechanical layer 78 (see FIG. 8G) has been removedalong the length of the gap 93 between the electrodes 92 (see FIG. 9A).Thus, this stage in the fabrication of the interferometric modulatorarray corresponds to the stage between those described with respect toFIGS. 8G and 8H, in an embodiment wherein the mechanical layer and thereflective layer 62 are etched by two separate etches, wherein themechanical layer has been etched and the reflective layer 62 has not yetbeen etched.

While a substantial portion of the reflective layer 62 located betweenthe electrodes 92 is exposed to the etch, there remains an annularsection 102 of the reflective layer 62 which is covered by the wingportion 74 of the post 96. This annular section 102 extends around theperiphery of the edge post 96 (see FIG. 9A), such that portions of thisannular section extend across the gap 93 between the electrodes 92. Ifthe reflective layer 62 is etched so as to only remove the exposedportions of the reflective layer 62, this annular portion 102 protectedby the wing portion 74 of the edge post 96 would remain unetched on theunderside of the wing portion 96, in contact with each of the electrodes92 on opposite sides of the gap 93. As the reflective layer 62 willgenerally comprise a highly conductive material, such as Al, theexistence of this annular portion 102 will result in the two laterallyadjacent strip electrodes 92 being shorted to one another, and will havea detrimental effect on the operation of the device.

In one embodiment, in order to remove these portions 102 of thereflective layer 62, the etch used to remove the uncovered portions ofthe reflective layer 102 is also designed to undercut the support post96, such that it etches the reflective layer 62 located underneath thewing portion 74. This undercut may be achieved, for example, by exposingthe partially fabricated device to the reflective layer etch for aprolonged period of time. However, such undercutting may be difficult tocontrol, and it is therefore difficult to ensure that all of thereflective material located underneath the wing portion 74 of the post96 will be removed by this undercutting. In certain cases, contiguousportions of the reflective layer 62 may still extend from one of thestrip electrodes 92 to an adjacent electrode. Such a contiguous portionmay be referred to as a “stringer.” The existence of these stringers mayresult in the adjacent electrodes 92 being shorted to one another,detrimentally affecting the operation of the device.

In an alternate embodiment, the need for potentially unreliableoveretching of the reflective layer may be eliminated through the use ofthe mechanical layer 78 as a hard mask to etch both the reflective layer62 and certain portions of the edge posts 96. This embodiment maycomprise the steps described with respect to FIGS. 8A-8B. As discussedabove, and as can be seen with respect to FIG. 10A, the sacrificiallayer 60 is deposited, patterned, and etched to form apertures 64 priorto the deposition of the reflective layer 62. The reflective layer 62has then been deposited over the patterned sacrificial layer 60, suchthat it covers the interior surfaces of the aperture 64, in addition tothe upper surface of the sacrificial layer 60.

In FIG. 10B, it can be seen that a layer of post material has beendeposited over the reflective layer 62, and patterned and etched to formpost structures 96. In the illustrated embodiment, the post structureformed is an edge post 96, which will support two adjacent electrodes.The edge post 96 comprises a wing portion 74 extending around theperimeter of the post, as well as a sloped portion 98 and a base portion99. As described with respect to the previous process flow, thereflective layer 62 may advantageously serve as an etch stop during theetching of the edge post 96, protecting the underlying sacrificial layer60.

With reference to FIG. 10C, a mechanical layer 78 has been depositedover the edge post 96 and the exposed portions of the reflective layer62. The mechanical layer 78 has then been patterned to form desiredstructures. In the illustrated embodiment, the mechanical layer 78 hasbeen patterned and etched to form a gap 93 which separates portions 104of the mechanical layer 78 from one another. As discussed above, in oneembodiment, the mechanical layer 78 comprises nickel and is etched usinga nickel etch. The mechanical layer 78 may also be patterned and etchedto form etch holes (not shown), such as the etch holes 82 depicted inFIG. 8H.

In FIG. 10D, it can be seen that the mechanical layer 78 has been usedas a hard mask to etch the exposed portions of the edge post 96 (FIG.10C). Thus, while the edge post 96 (FIG. 10C) has been deposited as asingle support structure, the etch used to remove a central portion ofthe edge post 96 (FIG. 10C) has created two isolated edge posts 106. Inan embodiment in which the mechanical layer 78 is used as an etch stop,the isolated edge posts 106 comprise a substantially vertical face 107along the edge of the isolated edge post 106 facing the gap 93. Thissubstantially vertical face 107 extends parallel to the edge of theportion 104 of the mechanical layer 78 along the gap 93, and thuspreferably coincides with the edge of the moving electrode or mechanicallayer 78. Each isolated edge post 106 further comprises a substantiallyflat base area 99 corresponding to the base of the tapered apertures 64(see FIG. 10A), and a sloped side portion 98 corresponding to thetapered edges of the tapered aperture. In the illustrated embodiment,the isolated support post 106 comprises a horizontal wing portion 74extending around the edges of the isolated support post 106 not facingthe gap 93. In alternate embodiments, depending on the etch being used,the face 107 facing the gap 93 may not be substantially vertical, butmay rather comprise a taper.

In the illustrated embodiment, the reflective layer 62 which extendsunderneath the edge post 96 serves as an etch stop for the support postetch at the stage of FIG. 10B. In the illustrated embodiment, the use ofa plasma etch to remove the exposed portions of the post is enabled bythe existence of the underlying reflective layer 62 at this stage. WhileNi is particularly suitable for use in the mechanical layer 78, othermetals which may serve as hard masks include, but are not limited to,aluminum and noble metals.

In FIG. 10E, the exposed portion of the reflective layer 62 in the gap93 has been etched in the gap 93. In embodiments in which the reflectivelayer 62 comprises a conductive material, such as aluminum, the portions104 of the mechanical layer 78 and the underlying sections of thereflective layer 62 form upper strip electrodes 92 (such as those shownin FIG. 9A). Because those portions of the support posts underneath thegap 93 between the portions 104 of the mechanical layer have beenremoved, no portion of the reflective layer 62 located under the gap 93will be covered by an overlying layer. It is thus much easier to etchthe reflective layer 62 to ensure that no portions of the reflectivelayer extend across the gap 93. The upper strip electrodes 92 are thuselectrically isolated from one another. In one embodiment, an etch maybe used which is selective with respect to the underlying sacrificiallayer 60, which will be exposed to the etch in non-post regions alongthe gap 93. Examples of a suitable selective etch for the exemplarymaterials include a PA etch, which includes phosphoric and acetic acids.In an embodiment in which the reflective layer 62 comprises aluminum andthe sacrificial layer 60 comprises molybdenum, the PA etch will etch thealuminum while leaving the molybdenum relatively untouched. However, asthe mechanical layer 78 has already been deposited, the sacrificiallayer 60 can at this point be partially etched without causing problemswith the fabrication process. Thus, a PAN etch, which is less selectivewith respect to the molybdenum than the PA etch, may nevertheless beused, as additional etching of the sacrificial layer 60 at this pointwill not have a detrimental effect on the fabrication process.

In FIG. 10F, it can also be seen that a release etch has been performedto remove the sacrificial layer 60, creating cavities 84 which permitdeflection of the deformable electrode or reflective layer 80 towardsthe stationary electrode layer 52. In the illustrated interferometricmodulator, the cavities 84 define the color reflected by the device inthe relaxed position. In one embodiment, the stationary electrode layer52 comprises first means for electrically conducting, the upperelectrodes 92 comprise second means for electrically conducting andadjacent second means for electrically conducting, and the isolated edgeposts 106 comprise means for supporting edge portions of the secondconducting means and electrically isolating the second conducting meansfrom the adjacent second conducting means.

FIG. 11 depicts an overhead view of a portion of a finished array ofinterferometric modulators. The portion of the array depicted in FIG.10F is located along the line 10F-10F. In the illustrated embodiment,two upper electrodes 92 are separated by a gap 93. The edges of theseupper electrodes 92 are supported by the isolated edge posts 106. Inother words, the gap 93 between electrodes also extends between edgeposts 106 with edges facing the gap 93 that coincide with edges of thestrip electrodes. In the illustrated embodiment, the edge posts 106 haveedges that coincide with both the edges of the reflective layer 62 andthe edges of the mechanical layer 78. As can be seen in FIG. 11 inconjunction with FIGS. 10D-10F, the isolated edge posts contain asubstantially flat base portion 99, a sloped portion 98, and asubstantially horizontal wing portion 74. The isolated edge post 106comprises a face 107 (see FIG. 10F) extending along the edge of theisolated edge post 106 facing the gap 93. The wing portion 74 extendsaround the edges of the isolated support post 106 not facing the gap 93.

In further embodiments, the size and shape of the isolated edge postsmay be varied in order to provide the desired amount of support. Inaddition, isolated edge posts may also be formed along the very edges ofthe array, with no corresponding isolated edge post supporting anadjacent strip electrode.

Various modifications may be made to the above process flows. Inparticular, depending on the composition of the various layers and theetches used, the order in which certain layers are deposited can bevaried. In an embodiment where the support post is formed from amaterial which is selectively etchable relative to the optical stack,the reflective layer need not serve as an etch stop relative to theoptical stack during the etching of the support posts to form isolatededge posts. Thus, the reflective layer may be deposited over thesacrificial layer prior to patterning of the sacrificial layer, asdescribed with respect to FIGS. 8C and 8D. In such an embodiment, thereflective layer 62 would not extend underneath support posts in theinterior of an interferometric modulator element, which may lessen thelikelihood of a short between the conductive reflective layer 62 and thestationary electrode layer 52. In a further embodiment in which an etchstop layer is located over the dielectric layer, the etch stop layer mayserve to protect the optical stack, if the optical stack is notselectively etchable relative to the support structure. Other variationsare possible, as well.

In other embodiments, the processes and structures described above withrespect to FIGS. 10A-11 may be used in conjunction with the embodimentsof FIGS. 1-7E, and in particular the various interferometric modulatorstructures described with respect to those figures.

It will also be recognized that the order of layers and the materialsforming those layers in the above embodiments are merely exemplary.Moreover, in some embodiments, other layers, not shown, may be depositedand processed to form portions of a MEMS device or to form otherstructures on the substrate. In other embodiments, these layers may beformed using alternative deposition, patterning, and etching materialsand processes, may be deposited in a different order, or composed ofdifferent materials, as would be known to one of skill in the art.

It is also to be recognized that, depending on the embodiment, the actsor events of any methods described herein can be performed in othersequences, may be added, merged, or left out altogether (e.g., not allacts or events are necessary for the practice of the methods), unlessthe text specifically and clearly states otherwise.

While the above detailed description has shown, described, and pointedour novel features of the invention as applied to various embodiments,it will be understood that various omissions, substitutions, and changesin the form and details of the device of process illustrated may be madeby those skilled in the art without departing from the spirit of theinvention. As will be recognized, the present invention may be embodiedwithin a form that does not provide all of the features and benefits setforth herein, as some features may be used or practiced separately fromothers.

1. A method of fabricating a microelectromechanical systems (MEMS)device, comprising: forming an electrode layer over a substrate;depositing a sacrificial layer over the electrode layer; forming aplurality of support structures, said support structures extendingthrough the sacrificial layer, wherein at least some of said pluralityof support structures comprise edge support structures; depositing amechanical layer over the plurality of support structures; patterningthe mechanical layer to form strips, wherein said strips are separatedby gaps, and wherein said gaps are located over a central portion ofeach of said edge support structures; and after forming the plurality ofsupport structures, etching a portion of each of said edge supportstructures underlying the gaps, thereby forming isolated edge supportstructures.
 2. The method of claim 1, wherein etching a portion of eachof said edge support structures underlying the gaps comprises etching acentral portion of each of said edge support structures to form twoisolated edge support structures.
 3. The method of claim 1, whereinpatterning the mechanical layer to form strips comprises using a mask,and wherein etching a portion of each of said edge support structurescomprises using the same mask
 4. The method of claim 1, wherein thepatterned mechanical layer is used as a hard mask during the etching ofa portion of each of said edge support structures.
 5. The method ofclaim 1, additionally comprising removing said sacrificial material. 6.The method of claim 1, wherein forming a plurality of support structurescomprises: patterning the layer of sacrificial material to formapertures; depositing a layer of support structure material over thepatterned sacrificial layer and into the apertures; and patterning thelayer of support structure material to form support structures.
 7. Themethod of claim 6, wherein patterning the layer of sacrificial materialto form apertures comprises patterning the layer of sacrificial materialto form tapered apertures.
 8. The method of claim 6, additionallycomprising depositing a reflective layer over the sacrificial layerprior to patterning the sacrificial layer.
 9. The method of claim 6,additionally comprising depositing a reflective layer over thesacrificial layer after patterning the sacrificial layer.
 10. The methodof claim 9, wherein etching a portion of each of said edge supportstructures comprises using a plasma etch.
 11. The method of claim 9,wherein patterning the layer of support structure material to formsupport structures comprises using a plasma etch or wet etch.
 12. Themethod of claim 6, wherein patterning the layer of support structurematerial to form support structures comprises removing portions of thesupport structure layer located away from the apertures, thereby formingsupport structures having wing portions which extend horizontally alongthe sacrificial layer near the apertures.
 13. The method of claim 1,wherein the electrode layer comprises indium tin oxide.
 14. The methodof claim 1, wherein the sacrificial layer comprises molybdenum, silicon,tungsten, or tantalum.
 15. The method of claim 1, wherein the supportstructures comprise a material selected from the group of: SiO₂ andSiN_(x).
 16. The method of claim 1, wherein the mechanical layercomprises a material selected from the group of: nickel and aluminum.17. The method of claim 16, wherein the mechanical layer is used as ahard mask during the etching of the portions of the edge supportstructures.
 18. The method of claim 1, additionally comprisingdepositing a partially reflective layer over the substrate.
 19. Themethod of claim 18, wherein the partially reflective layer is depositedover the electrode layer.
 20. The method of claim 18, wherein thepartially reflective layer comprises chromium.
 21. The method of claim1, additionally comprising depositing a dielectric layer over theelectrode layer.
 22. The method of claim 21, wherein the dielectriclayer comprises a material selected from the group of: SiO₂ and SiN_(x).23. The method of claim 1, additionally comprising depositing areflective layer over the sacrificial layer.
 24. The method of claim 23,wherein the reflective layer comprises a material selected from thegroup of: aluminum, silver, gold, copper, palladium, platinum, andrhodium.
 25. The method of claim 23, additionally comprising etching thereflective layer to remove the portions of the reflective layer locatedunder the gaps in the mechanical layer.
 26. A microelectromechanicalsystems device fabricated by the method of claim
 1. 27. An apparatuscomprising an array of MEMS devices, the array comprising: a pluralityof lower electrodes located over a substrate; a plurality of upper stripelectrodes spaced apart from the plurality of lower electrodes by acavity, the upper strip electrodes separated by gaps; a plurality ofisolated edge posts located between the upper strip electrodes and thelower electrodes, wherein the isolated edge posts comprise a faceextending along the edge of the isolated edge posts facing an adjacentgap.
 28. The apparatus of claim 27, wherein said face is coincident withthe edge of the upper strip electrode overlying the isolated edge posts.29. The apparatus of claim 27, further comprising at least one pair ofisolated edge posts, wherein a first isolated edge post is locatedunderneath a first upper strip electrode, and wherein a second isolatededge post is located underneath a second upper strip electrode adjacentto the first upper strip electrode, wherein the pair of isolated edgeposts are formed by etching a single support structure.
 30. Theapparatus of claim 27, wherein the isolated edge posts additionallycomprise a substantially horizontal wing portion along the edges of theisolated edge post not facing the adjacent gap between upper stripelectrodes, wherein the substantially horizontal wing portion is spacedapart from the substrate by the cavity and extends substantiallyparallel to the substrate.
 31. The apparatus of claim 27, wherein theface extending along the edge of the isolated edge post facing theadjacent gap between upper strip electrodes comprises a substantiallyvertical face.
 32. The apparatus of claim 27, wherein the plurality ofupper strip electrodes comprises nickel.
 33. The apparatus of claim 27,wherein the plurality of lower electrodes comprises indium tin oxide.34. The apparatus of claim 27, wherein the isolated edge posts comprisea material selected from the group of: SiO₂ and SiN_(x).
 35. Theapparatus of claim 27, wherein the isolated edge posts comprise asubstantially flat base portion in contact with underlying layers on thesubstrate, and a sloped side portion extending away from the substratetoward the wing portion.
 36. The apparatus of claim 27, additionallycomprising a dielectric layer located over the lower electrodes on thesame side of the cavity as the electrode.
 37. The apparatus of claim 36,wherein the dielectric layer comprises a material selected from thegroup of: SiO₂ and SiN_(x).
 38. The apparatus of claim 27, additionallycomprising a partially reflective layer located over the plurality oflower electrodes on the same side of the cavity as the lower electrodes.39. The apparatus of claim 38, wherein the partially reflective layercomprises chromium.
 40. The apparatus of claim 27, additionallycomprising a reflective layer located under the plurality of upper stripelectrodes on the same side of the cavity as the upper strip electrodes.41. The apparatus of claim 40, wherein the reflective layer comprises amaterial selected from the group of: aluminum, silver, gold, copper,palladium, platinum, and rhodium.
 42. The apparatus of claim 40, whereinthe reflective layer extends underneath at least a portion of theisolated edge posts.
 43. The apparatus of claim 27, additionallycomprising a processor that is configured to communicate with at leastone of said upper and lower electrodes, said processor being configuredto process image data; and a memory device that is configured tocommunicate with said processor.
 44. The apparatus of claim 43, furthercomprising a driver circuit configured to send at least one signal to atleast one of said upper and lower electrodes.
 45. The apparatus of claim44, further comprising a controller configured to send at least aportion of the image data to the driver circuit.
 46. The apparatus ofclaim 43, further comprising an image source module configured to sendsaid image data to said processor.
 47. The apparatus of claim 46,wherein the image source module comprises at least one of a receiver,transceiver, and transmitter.
 48. The apparatus of claim 43, furthercomprising an input device configured to receive input data and tocommunicate said input data to said processor.
 49. A method offabricating a microelectromechanical systems (MEMS) device, comprising:forming an electrode layer over a substrate; depositing a sacrificiallayer over the electrode layer; depositing a reflective layer over thesacrificial layer; forming a plurality of support structures, saidsupport structures extending through the sacrificial layer, wherein atleast some of said plurality of support structures comprise edge supportstructures; depositing a mechanical layer over the plurality of supportstructures; patterning the mechanical layer to form strips, wherein saidstrips are separated by gaps, and wherein said gaps are located over acentral portion of each of said edge support structures; and etchingportions of the reflective layer extending underneath the gaps in themechanical layer, wherein etching the reflective layer comprisesexposing the reflective layer to an etch for a period of time sufficientto electrically isolate portions of the reflective layer locatedunderneath the strips from one another.
 50. The method of claim 49,wherein the support structures comprise wing portions extendingoverlying annular portions of the reflective layer, and wherein etchingportions of the reflective layer comprises overetching the reflectivelayer to etch sections of the annular portions of the layer underlyingthe gaps in the mechanical layer.
 51. A MEMS device, comprising: firstmeans for electrically conducting; second means for electricallyconducting; adjacent second means for electrically conducting; and meansfor supporting edge portions of and for electrically isolating saidsecond conducting means from said adjacent second conducting means,wherein said second conducting means is electrically isolated from saidfirst conducting means, and wherein said second conducting means ismovable relative to said first conducting means in response togenerating electrostatic potential between said first and secondconducting means.
 52. The MEMS device of claim 51, wherein: said firstconducing means comprise a plurality of lower electrodes supported by asubstrate; said second conducting means and said adjacent secondconducting means comprise a plurality of upper strip electrodessupported by a substrate, and spaced apart from one another by gaps,wherein the upper strip electrodes are electrically isolated from thelower electrodes; and said means for supporting edge portions of and forelectrically isolating said second conducting means comprise a pluralityof isolated edge posts located between the upper strip electrodes andthe lower electrodes, wherein the isolated edge posts comprise a faceextending along the edge of the isolated edge posts facing an adjacentgap, wherein said face is coincident with the edge of the upper stripelectrode overlying the isolated edge posts.
 53. The MEMS device ofclaim 52, wherein said plurality of isolated edge posts comprise atleast one pair of isolated edge posts, wherein a first isolated edgepost is located underneath a first upper strip electrode, and wherein asecond isolated edge post is located underneath a second upper stripelectrode adjacent to the first upper strip electrode, wherein the pairof isolated edge posts are formed by etching a single support structure.